Invention Grant
- Patent Title: High voltage dedicated charging port
- Patent Title (中): 高压专用充电口
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Application No.: US13759865Application Date: 2013-02-05
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Publication No.: US08745301B2Publication Date: 2014-06-03
- Inventor: Shadi Hawawini , Georgios K. Paparrizos
- Applicant: QUALCOMM Incorportated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Fountainhead Law Group P.C.
- Main IPC: G06F13/36
- IPC: G06F13/36 ; G06F13/00 ; G06F1/00 ; H02J7/00 ; G06F1/32 ; G06F1/26 ; G01R19/25
Abstract:
Circuitry in a portable device may be attached to external device, such as a power supply, to receive a voltage at a desired voltage level from the external device. The circuitry may assert one of several electrical configurations on the cabling that electrically connects the portable device to the external device to indicate to the external device a desired voltage level.
Public/Granted literature
- US20140117923A1 HIGH VOLTAGE DEDICATED CHARGING PORT Public/Granted day:2014-05-01
Information query
