Invention Grant
US08745313B2 Memory system and method for controlling a nonvolatile semiconductor memory
有权
用于控制非易失性半导体存储器的存储器系统和方法
- Patent Title: Memory system and method for controlling a nonvolatile semiconductor memory
- Patent Title (中): 用于控制非易失性半导体存储器的存储器系统和方法
-
Application No.: US12394632Application Date: 2009-02-27
-
Publication No.: US08745313B2Publication Date: 2014-06-03
- Inventor: Junji Yano , Kosuke Hatsuda , Hidenori Matsuzaki , Wataru Okamoto
- Applicant: Junji Yano , Kosuke Hatsuda , Hidenori Matsuzaki , Wataru Okamoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-051464 20080301
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A memory system includes a nonvolatile semiconductor memory having blocks, the block being data erasing unit; and a controller configured to execute; an update processing for; writing superseding data in a block, the superseding data being treated as valid data; and invalidating superseded data having the same logical address as the superseding data, the superseded data being treated as invalid data; and a compaction processing for; retrieving blocks having invalid data using a management tablet the management table managing blocks in a linked list format for each number of valid data included in the block; selecting a compaction source block having at least one valid data from the retrieved blocks; copying a plurality of valid data included in the compaction source blocks into a compaction target block; invalidating the plurality of valid data in the compaction source blocks; and releasing the compaction source blocks in which all data are invalidated.
Public/Granted literature
- US20090248964A1 MEMORY SYSTEM AND METHOD FOR CONTROLLING A NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2009-10-01
Information query