Invention Grant
US08745315B2 Memory Systems and methods supporting volatile and wear-leveled nonvolatile physical memory
有权
支持易失性和磨损级非易失性物理内存的内存系统和方法
- Patent Title: Memory Systems and methods supporting volatile and wear-leveled nonvolatile physical memory
- Patent Title (中): 支持易失性和磨损级非易失性物理内存的内存系统和方法
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Application No.: US12513848Application Date: 2007-11-06
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Publication No.: US08745315B2Publication Date: 2014-06-03
- Inventor: Frederick A. Ware , Ely K. Tsern
- Applicant: Frederick A. Ware , Ely K. Tsern
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Silicon Edge Law Group LLP
- Agent Arthur J. Behiel
- International Application: PCT/US2007/023432 WO 20071106
- International Announcement: WO2008/057557 WO 20080515
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28
Abstract:
A memory system includes nonvolatile physical memory, such as flash memory, that exhibits a wear mechanism asymmetrically associated with write operations. A relatively small cache of volatile memory reduces the number of writes, and wear-leveling memory access methods distribute writes evenly over the nonvolatile memory.
Public/Granted literature
- US20100077136A1 Memory System Supporting Nonvolatile Physical Memory Public/Granted day:2010-03-25
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