A method and a corresponding apparatus provide for remapping for wear leveling of a memory. The method is implemented as logic and includes the steps of receiving a memory operation, the memory operation including a logical memory address; dividing the logical address into a logical block address portion, a logical line address portion, and a logical subline address portion; translating the logical block address portion into a physical block address; selecting a line remap key; applying the line remap key to the logical line address portion to produce a physical line address; producing a physical subline address portion; and combining the physical block, line, and subline address portions to produce a physical address for the memory operation.