A resistive memory device and a system and method for testing the resistive memory device are provided. The resistive memory device includes a plurality of bit lines comprising at least one dummy bit line to which a plurality of resistive memory cells are connected, a conducting wire connected to the dummy bit line, a first switching element positioned between the dummy bit line and an external device outside the resistive memory device, and a second switching element positioned between the conducting wire and the external device. Accordingly, the operational reliability of the resistive memory device may be increased.