Invention Grant
US08745463B2 Error correcting codes for increased storage capacity in multilevel memory devices
有权
错误纠正代码以增加多级存储器件的存储容量
- Patent Title: Error correcting codes for increased storage capacity in multilevel memory devices
- Patent Title (中): 错误纠正代码以增加多级存储器件的存储容量
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Application No.: US13712880Application Date: 2012-12-12
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Publication No.: US08745463B2Publication Date: 2014-06-03
- Inventor: Paolo Amato , Giovanni Campardo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H03M13/00
- IPC: H03M13/00

Abstract:
Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed.
Public/Granted literature
- US20130191697A1 ERROR CORRECTING CODES FOR INCREASED STORAGE CAPACITY IN MULTILEVEL MEMORY DEVICES Public/Granted day:2013-07-25
Information query
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