Invention Grant
- Patent Title: Perturbational technique for co-optimizing design rules and illumination conditions for lithography process
- Patent Title (中): 用于光刻工艺共同优化设计规则和照明条件的扰动技术
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Application No.: US14102086Application Date: 2013-12-10
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Publication No.: US08745548B2Publication Date: 2014-06-03
- Inventor: James Walter Blatchford
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A process of generating design rules, OPC rules and optimizing illumination source models for an integrated circuit layout, to form short lines, terminated lines and crossovers between adjacent parallel route tracks, may include the steps of generating a set of template structures which use a set of characteristic design rules, and performing a plurality of source mask optimization (SMO) operations on the set of template structures with different values for the design rules in each SMO operation. In a first embodiment, the SMO operations are run using a predetermined set of values for each of the design rules, spanning a desired range of design rule values. In a second embodiment, the SMO operations are performed in a conditional iterative process in which values of the design rules are adjusted after each iteration based on results of the iteration.
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