Invention Grant
- Patent Title: Equivalent circuit of bidirectional switch, simulation method for bidirectional switch, and simulation device for bidirectional switch
- Patent Title (中): 双向开关的等效电路，双向开关的仿真方法和双向开关的仿真装置
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Application No.: US13867187Application Date: 2013-04-22
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Publication No.: US08745569B2Publication Date: 2014-06-03
- Inventor: Hiroaki Ueno , Satoshi Makioka , Manabu Yanagihara
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, LLP.
- Priority: JP2011-139077 20110623
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
Provided is a simulation method for simulating electrical properties of a bidirectional switch formed as a single element and having a double gate structure. A simulation is performed using an equivalent circuit having a symmetrical structure in which a drain electrode of a JFET and a drain electrode of another JFET are connected via a resistor.
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