Invention Grant
- Patent Title: Doped aluminum nitride crystals and methods of making them
- Patent Title (中): 掺杂氮化铝晶体及其制备方法
-
Application No.: US12642182Application Date: 2009-12-18
-
Publication No.: US08747552B2Publication Date: 2014-06-10
- Inventor: Glen A. Slack , Leo J. Schowalter
- Applicant: Glen A. Slack , Leo J. Schowalter
- Applicant Address: US NY Green Island
- Assignee: Crystal IS, Inc.
- Current Assignee: Crystal IS, Inc.
- Current Assignee Address: US NY Green Island
- Agency: Bingham McCutchen LLP
- Main IPC: C30B29/38
- IPC: C30B29/38
Abstract:
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Public/Granted literature
- US20100187541A1 Doped Aluminum Nitride Crystals and Methods of Making Them Public/Granted day:2010-07-29
Information query
IPC分类:
