A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.