Invention Grant
US08747579B2 Solder layer and device bonding substrate using the same and method for manufacturing such a substrate
有权
焊料层和使用其的器件接合衬底以及用于制造这种衬底的方法
- Patent Title: Solder layer and device bonding substrate using the same and method for manufacturing such a substrate
- Patent Title (中): 焊料层和使用其的器件接合衬底以及用于制造这种衬底的方法
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Application No.: US12037958Application Date: 2008-02-27
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Publication No.: US08747579B2Publication Date: 2014-06-10
- Inventor: Yoshikazu Oshika , Munenori Hashimoto , Masayuki Nakano
- Applicant: Yoshikazu Oshika , Munenori Hashimoto , Masayuki Nakano
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Chen Yoshimura LLP
- Priority: JP2007-48170 20070227
- Main IPC: C22F1/14
- IPC: C22F1/14

Abstract:
A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided.A device bonding substrate 1 including a substrate 2 and a lead free solder layer 5 formed on said substrate has a solder layer 5 consisting of a plurality of layers having mutually different phases, and oxygen concentration on the upper surface of the solder layer is lower than 30 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer 5. Carbon concentration on the upper surface of the solder layer 5 may be lower than 10 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer.
Public/Granted literature
- US20080205013A1 SOLDER LAYER AND DEVICE BONDING SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING SUCH A SUBSTRATE Public/Granted day:2008-08-28
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