Invention Grant
- Patent Title: TMR device with novel free layer
- Patent Title (中): TMR器件具有新颖的自由层
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Application No.: US12284454Application Date: 2008-09-22
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Publication No.: US08747629B2Publication Date: 2014-06-10
- Inventor: Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
- Applicant: Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/32 ; G11B5/33 ; G11B5/127
Abstract:
A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
Public/Granted literature
- US20100073828A1 TMR device with novel free layer Public/Granted day:2010-03-25
Information query
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