Invention Grant
- Patent Title: Tantalum sputtering target and method for manufacturing the same, and method for manufacturing semiconductor element
- Patent Title (中): 钽溅射靶及其制造方法以及半导体元件的制造方法
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Application No.: US13470800Application Date: 2012-05-14
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Publication No.: US08747633B2Publication Date: 2014-06-10
- Inventor: Nobuaki Nakashima , Yoshiki Orimoto
- Applicant: Nobuaki Nakashima , Yoshiki Orimoto
- Applicant Address: JP Tokyo JP Yokohama-shi
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Materials Co., Ltd.
- Current Assignee Address: JP Tokyo JP Yokohama-shi
- Agency: Foley & Lardner LLP
- Priority: JPP2009-262103 20091117
- Main IPC: C23C14/14
- IPC: C23C14/14 ; C22C27/02 ; C22F1/18 ; C23C14/34

Abstract:
In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.
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