Invention Grant
- Patent Title: Graphene defect alteration
- Patent Title (中): 石墨烯缺陷改变
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Application No.: US13377971Application Date: 2011-09-16
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Publication No.: US08747947B2Publication Date: 2014-06-10
- Inventor: Seth Miller
- Applicant: Seth Miller
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development, LLC
- Current Assignee: Empire Technology Development, LLC
- Current Assignee Address: US DE Wilmington
- Agency: Moritt Hock & Hamroff LLP
- Agent Steven S. Rubin, Esq.
- International Application: PCT/US2011/051870 WO 20110916
- International Announcement: WO2013/039506 WO 20130321
- Main IPC: C23C16/30
- IPC: C23C16/30 ; C23C16/56 ; B82Y40/00

Abstract:
Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
Public/Granted literature
- US20130071564A1 GRAPHENE DEFECT ALTERATION Public/Granted day:2013-03-21
Information query
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