Invention Grant
- Patent Title: Apparatus and method for diamond film growth
- Patent Title (中): 用于金刚石膜生长的装置和方法
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Application No.: US12359083Application Date: 2009-01-23
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Publication No.: US08747963B2Publication Date: 2014-06-10
- Inventor: Mark Phillip D'Evelyn , John Dewey Blouch , Ludwig Christian Haber , Hongying Peng , David Dils , Svetlana Selezneva , Kristi Jean Narang
- Applicant: Mark Phillip D'Evelyn , John Dewey Blouch , Ludwig Christian Haber , Hongying Peng , David Dils , Svetlana Selezneva , Kristi Jean Narang
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: Bracewell & Giuliani LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/27 ; C23C16/455 ; C23C16/511 ; H01J37/32

Abstract:
An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.
Public/Granted literature
- US20100189924A1 APPARATUS AND METHOD FOR DIAMOND FILM GROWTH Public/Granted day:2010-07-29
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