Invention Grant
- Patent Title: Ion-induced atomic layer deposition of tantalum
- Patent Title (中): 钽离子诱导的原子层沉积
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Application No.: US13244009Application Date: 2011-09-23
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Publication No.: US08747964B2Publication Date: 2014-06-10
- Inventor: Kie Jin Park , Jeong Seok Na , Victor Lu
- Applicant: Kie Jin Park , Jeong Seok Na , Victor Lu
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H05H1/24
- IPC: H05H1/24
Abstract:
Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the tantalum layer.
Public/Granted literature
- US20120115325A1 ION-INDUCED ATOMIC LAYER DEPOSITION OF TANTALUM Public/Granted day:2012-05-10
Information query
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