Invention Grant
- Patent Title: Method of fabricating wave-shaped mask for photolithography and exposure method of fabricating nano-scaled structure using the wave-shaped mask
- Patent Title (中): 用于光刻的波形掩模的制造方法以及使用波形掩模制造纳米级结构的曝光方法
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Application No.: US13424119Application Date: 2012-03-19
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Publication No.: US08748061B2Publication Date: 2014-06-10
- Inventor: Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
- Applicant: Si-Chen Lee , Fang-Tzu Chuang , Yu-Wei Jiang
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Huffman Law Group, P.C.
- Priority: TW100132878A 20110913
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method of fabricating wave-shaped mask is disclosed. The method of fabricating wave-shaped mask comprises the steps of providing an elastomeric transparent substrate comprising an upper surface and a lower surface, applying a stable force to the elastomeric transparent substrate for deforming the elastomeric transparent substrate, forming a light-penetrable thin film layer on the upper surface of the elastomeric transparent substrate, and removing the force applying to the elastomeric transparent substrate, whereby the upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape and the lower surface of the elastomeric transparent substrate is in a plate shape.
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