Invention Grant
US08748077B2 Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device
有权
抗蚀剂图案改善材料，形成抗蚀剂图案的方法，半导体器件的制造方法和半导体器件
- Patent Title: Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device
- Patent Title (中): 抗蚀剂图案改善材料，形成抗蚀剂图案的方法，半导体器件的制造方法和半导体器件
-
Application No.: US13358892Application Date: 2012-01-26
-
Publication No.: US08748077B2Publication Date: 2014-06-10
- Inventor: Koji Nozaki , Miwa Kozawa
- Applicant: Koji Nozaki , Miwa Kozawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2011-054410 20110311
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/40
Abstract:
To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.
Public/Granted literature
Information query
IPC分类:
