Invention Grant
US08748085B2 Use of photosensitized Epon epoxy resin 1002F for MEMS and bioMEMS applications
有权
光敏Epon环氧树脂1002F用于MEMS和bioMEMS应用
- Patent Title: Use of photosensitized Epon epoxy resin 1002F for MEMS and bioMEMS applications
- Patent Title (中): 光敏Epon环氧树脂1002F用于MEMS和bioMEMS应用
-
Application No.: US12670349Application Date: 2008-07-25
-
Publication No.: US08748085B2Publication Date: 2014-06-10
- Inventor: Jeng-Hao Pai , Yuli Wang , Christopher E. Sims , Mark Bachman , Nancy Allbritton , Guann-Pyng Li
- Applicant: Jeng-Hao Pai , Yuli Wang , Christopher E. Sims , Mark Bachman , Nancy Allbritton , Guann-Pyng Li
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: One LLP
- Agent Kenneth S. Roberts
- International Application: PCT/US2008/071242 WO 20080725
- International Announcement: WO2009/015361 WO 20090129
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
Systems and methods directed to the use 1002F to build microdevices and biomedical devices. Through the addition of a photosensitizing agent, Epon epoxy resin 1002F can be linked in the presence of UV light, making it useful as a photoresist or as a micropatternable structural material. One embodiment comprises combining 1002F monomer resin with a solvent and a photoinitiator, placing the monomer solution on a surface, exposing the monomer solution to UV light through a mask to initiate linking, and stripping the unlinked polymer away. In another embodiment, 3-D structures are built using two or more layers of sensitized monomer films, each having different sensitivity to light, and the use of a mask containing opaque and semi-opaque regions.
Public/Granted literature
- US20110223545A1 USE OF PHOTOSENSITIZED EPON EPOXY RESIN 1002F FOR MEMS AND BIOMEMS APPLICATIONS Public/Granted day:2011-09-15
Information query
IPC分类: