Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13524075Application Date: 2012-06-15
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Publication No.: US08748198B2Publication Date: 2014-06-10
- Inventor: Naoyuki Teramoto , Megumu Fukazawa , Masayuki Kumashiro , Kiyoshi Kawagashira
- Applicant: Naoyuki Teramoto , Megumu Fukazawa , Masayuki Kumashiro , Kiyoshi Kawagashira
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-133779 20110616
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A focus through a projection lens is corrected to prevent the occurrence of a dimensional error in a pattern due to defocusing. At least one automatic focus correction mark is formed over each of chip patterns formed in a reticle used for exposure. Using one of the automatic focus correction marks located in the center portion of an actual device region, automatic correction of the focus of exposure light is performed. In this manner, a variation in the focus of the exposure light through the center portion of the projection lens, which is more likely to reach a high temperature than an end portion of the projection lens, is detected and corrected.
Public/Granted literature
- US20120322169A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-12-20
Information query
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