Invention Grant
- Patent Title: In-situ measurement of feature dimensions
- Patent Title (中): 特征尺寸的原位测量
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Application No.: US13092815Application Date: 2011-04-22
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Publication No.: US08748199B2Publication Date: 2014-06-10
- Inventor: Dmytro Chumakov
- Applicant: Dmytro Chumakov
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
Methods and systems are provided for fabricating a semiconductor device. An exemplary method involves forming a feature of a semiconductor device in a first region of a layer of material on a semiconductor substrate and forming a test structure in a second region of the layer of material. The test structure is formed concurrently to forming the feature, and a dimension of the feature is determined using the test structure.
Public/Granted literature
- US20120270342A1 IN-SITU MEASUREMENT OF FEATURE DIMENSIONS Public/Granted day:2012-10-25
Information query
IPC分类: