Invention Grant
US08748199B2 In-situ measurement of feature dimensions 有权
特征尺寸的原位测量

In-situ measurement of feature dimensions
Abstract:
Methods and systems are provided for fabricating a semiconductor device. An exemplary method involves forming a feature of a semiconductor device in a first region of a layer of material on a semiconductor substrate and forming a test structure in a second region of the layer of material. The test structure is formed concurrently to forming the feature, and a dimension of the feature is determined using the test structure.
Public/Granted literature
Information query
Patent Agency Ranking
0/0