Method for fabricating thermo-electric generator

Invention Grant

US08748208B2 Method for fabricating thermo-electric generator 有权

Title translation: 热电发生器的制造方法

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Patent Title: Method for fabricating thermo-electric generator
Patent Title (中): 热电发生器的制造方法
Application No.: US13145207

Application Date: 2009-12-09
Publication No.: US08748208B2

Publication Date: 2014-06-10
Inventor: Ping Fan , Dong-Ping Zhang , Zhuang-Hao Zheng , Guang-Xing Liang
Applicant: Ping Fan , Dong-Ping Zhang , Zhuang-Hao Zheng , Guang-Xing Liang
Applicant Address: CN Guangdong
Assignee: Shenzhen University
Current Assignee: Shenzhen University
Current Assignee Address: CN Guangdong
Agency: Law Office of Michael Chen
Agent Che-Yang Chen
Priority: CN200910105173 20090120
International Application: PCT/CN2009/075422 WO 20091209
International Announcement: WO2010/083706 WO 20100729
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L31/04

Method for fabricating thermo-electric generator

Abstract:

For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side. The performance of thermo-electric generator fabricated in heating surface working temperature is accordingly greatly improved.

Abstract(Chinese):

对于本发明，在绝缘基板的两侧分别淀积P型热电薄膜层和N型热电薄膜层。在沉积期间，P型热电薄膜层和N型热电薄膜层沉积并连接在绝缘衬底的相同的暴露侧上，然后形成PN结。该方法简化了制造工艺，而不需要特殊工艺来连接P型热电薄膜层和N型热电薄膜层。由于薄膜热电材料的特点，热电发生器的性能得到提高。在沉积期间，P型热电薄膜层和N型热电薄膜层沉积并连接在绝缘基板的露出侧上，因此在该加热表面侧不需要焊接。因此，在加热表面工作温度下制造的热电发生器的性能大大提高。

Public/Granted literature

US20120064656A1 METHOD FOR FABRICATING THERMO-ELECTRIC GENERATOR Public/Granted day:2012-03-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）