Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13197825Application Date: 2011-08-04
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Publication No.: US08748224B2Publication Date: 2014-06-10
- Inventor: Kosei Noda , Toshinari Sasaki
- Applicant: Kosei Noda , Toshinari Sasaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-181832 20100816
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/10 ; H01L29/04
Abstract:
A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.
Public/Granted literature
- US20120040495A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2012-02-16
Information query
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