Invention Grant
- Patent Title: Semiconductor device having a through-substrate via
- Patent Title (中): 具有贯通基板通孔的半导体装置
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Application No.: US13342420Application Date: 2012-01-03
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Publication No.: US08748232B2Publication Date: 2014-06-10
- Inventor: Arkadii V. Samoilov , Tyler Parent , Larry Y. Wang
- Applicant: Arkadii V. Samoilov , Tyler Parent , Larry Y. Wang
- Applicant Address: US CA San Jose
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Advent, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Semiconductor devices are described that include a via that extends only partially through the substrate. Through-substrate vias (TSV) furnish electrical interconnectivity to electronic components formed in the substrates. In implementations, the semiconductor devices are fabricated by first bonding a semiconductor wafer to a carrier wafer with an adhesive material. The semiconductor wafer includes an etch stop disposed within the wafer (e.g., between a first surface a second surface of the wafer). One or more vias are formed through the wafer. The vias extend from the second surface to the etch stop.
Public/Granted literature
- US20130168850A1 SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA Public/Granted day:2013-07-04
Information query
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