Invention Grant
- Patent Title: Semiconductor device including contact holes and method for forming the same
- Patent Title (中): 包括接触孔的半导体器件及其形成方法
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Application No.: US13833972Application Date: 2013-03-15
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Publication No.: US08748248B2Publication Date: 2014-06-10
- Inventor: Xinpeng Wang , Yi Huang
- Applicant: Semiconductor Manufacturing International Corp.
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing Internatonal Corp.
- Current Assignee: Semiconductor Manufacturing Internatonal Corp.
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201210088632 20120329
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A semiconductor device including contact holes and method for forming the same are provided. A dual-stress liner is formed on a substrate. A first, second and third dielectric layers are then formed over the dual-stress liner. The second dielectric layer has a top surface leveling with that of an overlapping portion of the dual-stress liner. The third dielectric layer is etched to form first openings to have the etching stop at the second dielectric layer and at the upper stress liner of the overlapping portion. The second dielectric layer, the first dielectric layer and the upper stress liner are etched along the first openings to form second openings having the etching stop at the lower stress liner of the overlapping portion and the dual-stress liner in other regions. The stress liners are etched to form contact holes.
Public/Granted literature
- US20130256806A1 SEMICONDUCTOR DEVICE INCLUDING CONTACT HOLES AND METHOD FOR FORMING THE SAME Public/Granted day:2013-10-03
Information query
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