Invention Grant
US08748264B2 Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing same
有权
用于非易失性数据存储的自对准电荷捕获层，其形成工艺和含有其的器件
- Patent Title: Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing same
- Patent Title (中): 用于非易失性数据存储的自对准电荷捕获层，其形成工艺和含有其的器件
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Application No.: US11693925Application Date: 2007-03-30
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Publication No.: US08748264B2Publication Date: 2014-06-10
- Inventor: Kyu S. Min
- Applicant: Kyu S. Min
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A discrete storage element film is disposed above a tunneling dielectric film against a shallow trench isolation structure and under conditions to resist formation of the discrete storage element film upon vertical exposures of the shallow trench isolation structure. A discrete storage element film is also disposed above a tunneling dielectric film against a recessed isolation structure. A microelectronic device incorporates the discrete storage element film. A computing system incorporates the microelectronic device.
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