Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13323489Application Date: 2011-12-12
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Publication No.: US08748279B2Publication Date: 2014-06-10
- Inventor: Li Jiang , Mingqi Li
- Applicant: Li Jiang , Mingqi Li
- Applicant Address: CN Beijing
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Beijing
- Agency: Koppel, Patrick, Heybl & Philpott
- Priority: CN201110235045 20110816
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/00
Abstract:
The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.
Public/Granted literature
- US20130045581A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2013-02-21
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