Invention Grant
- Patent Title: Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
- Patent Title (中): 绝缘体上半导体衬底顶硅层中的高气体注入区
-
Application No.: US13280681Application Date: 2011-11-28
-
Publication No.: US08748285B2Publication Date: 2014-06-10
- Inventor: Alan B. Botula , William F. Clark, Jr. , Richard A. Phelps , BethAnn Rainey , Yun Shi , James A. Slinkman
- Applicant: Alan B. Botula , William F. Clark, Jr. , Richard A. Phelps , BethAnn Rainey , Yun Shi , James A. Slinkman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Michael LeStrange
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A semiconductor structure includes a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising a handle wafer, a buried oxide (BOX) layer on top of the handle wafer, and a top silicon layer on top of the BOX layer; and an implantation region located in the top silicon layer, the implantation region comprising a noble gas.
Public/Granted literature
- US20130134518A1 NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR-ON-INSULATOR SUBSTRATE Public/Granted day:2013-05-30
Information query
IPC分类:
