Methods of forming strained-semiconductor-on-insulator device structures

Invention Grant

US08748292B2 Methods of forming strained-semiconductor-on-insulator device structures 有权

Title translation: 形成应变绝缘体上半导体器件结构的方法

Patent Title: Methods of forming strained-semiconductor-on-insulator device structures
Patent Title (中): 形成应变绝缘体上半导体器件结构的方法
Application No.: US11073780

Application Date: 2005-03-07
Publication No.: US08748292B2

Publication Date: 2014-06-10
Inventor: Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
Applicant: Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater and Matsil, L.L.P.
Main IPC: H01L21/30
IPC: H01L21/30 ; H01L29/06 ; H01L21/762 ; H01L29/786 ; H01L29/66 ; H01L27/12 ; H01L29/78 ; H01L21/84 ; H01L21/02

Abstract:

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract(Chinese):

应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）