Invention Grant
- Patent Title: SOS substrate with reduced stress
- Patent Title (中): SOS底物减轻应力
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Application No.: US13519236Application Date: 2010-12-27
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Publication No.: US08748294B2Publication Date: 2014-06-10
- Inventor: Shoji Akiyama
- Applicant: Shoji Akiyama
- Applicant Address: JP
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JP2009-297994 20091228
- International Application: PCT/JP2010/073590 WO 20101227
- International Announcement: WO2011/081146 WO 20110707
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
There is provided an SOS substrate with reduced stress. The SOS substrate is a silicon-on-sapphire (SOS) substrate comprising a sapphire substrate and a monocrystalline silicon film on or above the sapphire substrate. The stress of the silicon film of the SOS substrate as measured by a Raman shift method is 2.5×108 Pa or less across an entire in-plane area of the SOS substrate.
Public/Granted literature
- US20120280355A1 SOS SUBSTRATE WITH REDUCED STRESS Public/Granted day:2012-11-08
Information query
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