Invention Grant
- Patent Title: Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material
- Patent Title (中): 通过去除虚拟填充材料来形成半导体器件的方法
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Application No.: US13452484Application Date: 2012-04-20
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Publication No.: US08748297B2Publication Date: 2014-06-10
- Inventor: Gudrun Stranzl , Martin Zgaga , Markus Kahn , Guenter Denifl
- Applicant: Gudrun Stranzl , Martin Zgaga , Markus Kahn , Guenter Denifl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/82 ; H01L21/8258
Abstract:
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Public/Granted literature
- US20130280888A1 Methods of Forming Semiconductor Devices Public/Granted day:2013-10-24
Information query
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