Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14048495Application Date: 2013-10-08
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Publication No.: US08748300B2Publication Date: 2014-06-10
- Inventor: Megumi Ishiduki , Ryota Katsumata , Tomo Ohsawa , Mitsuru Sato , Masaru Kidoh , Hiroyasu Tanaka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-057937 20110316
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L29/792
Abstract:
According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.
Public/Granted literature
- US20140038396A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2014-02-06
Information query
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