Invention Grant
US08748304B2 Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
有权
包含通过微量沉积直接写入银导体线沉积的银组合物的装置
- Patent Title: Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
- Patent Title (中): 包含通过微量沉积直接写入银导体线沉积的银组合物的装置
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Application No.: US13454836Application Date: 2012-04-24
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Publication No.: US08748304B2Publication Date: 2014-06-10
- Inventor: Haixin Yang , Roberto Irizarry , Patricia J. Ollivier
- Applicant: Haixin Yang , Roberto Irizarry , Patricia J. Ollivier
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01B1/22
- IPC: H01B1/22
Abstract:
Embodiments of the invention relate to a silicon semiconductor device, and a conductive thick film composition for use in a solar cell device.
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