Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13013433Application Date: 2011-01-25
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Publication No.: US08748314B2Publication Date: 2014-06-10
- Inventor: Tatsuya Usami
- Applicant: Tatsuya Usami
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-017245 20100128
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
There is provided a method of manufacturing a semiconductor device, which includes forming a TiN film as a hard mask directly on a second p-SiCOH film formed on a substrate, forming an opening passing through the TiN film and the second p-SiCOH film by photolithography and etching, cleaning the inside of the opening, removing the TiN film after cleaning the inside, and forming a second metal film filling the opening directly on the second p-SiCOH film after removing the TiN film.
Public/Granted literature
- US20110183518A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-07-28
Information query
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