Invention Grant
- Patent Title: Method of manufacturing a semiconductor device including a dielectric structure
- Patent Title (中): 制造包括电介质结构的半导体器件的方法
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Application No.: US13566192Application Date: 2012-08-03
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Publication No.: US08748317B2Publication Date: 2014-06-10
- Inventor: Gerhard Schmidt , Daniel Schloegl , Marcella Johanna Hartl , Philipp Sebastian Koch , Roland Strasser
- Applicant: Gerhard Schmidt , Daniel Schloegl , Marcella Johanna Hartl , Philipp Sebastian Koch , Roland Strasser
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3105 ; H01L21/321 ; H01L21/02 ; H01L21/304 ; B24B37/04
Abstract:
A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner.
Public/Granted literature
- US20140038413A1 Method of Manufacturing a Semiconductor Device including a Dielectric Structure Public/Granted day:2014-02-06
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