Invention Grant
US08748644B2 Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film
有权
钌化合物，其制造方法，使用该钌化合物的含钌薄膜的制造方法以及含钌化合物的薄膜
- Patent Title: Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film
- Patent Title (中): 钌化合物，其制造方法，使用该钌化合物的含钌薄膜的制造方法以及含钌化合物的薄膜
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Application No.: US13129589Application Date: 2009-12-21
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Publication No.: US08748644B2Publication Date: 2014-06-10
- Inventor: Taishi Furukawa , Noriaki Oshima , Kazuhisa Kawano , Hirokazu Chiba
- Applicant: Taishi Furukawa , Noriaki Oshima , Kazuhisa Kawano , Hirokazu Chiba
- Applicant Address: JP Shunan-shi, Yamaguchi
- Assignee: Tosoh Corporation
- Current Assignee: Tosoh Corporation
- Current Assignee Address: JP Shunan-shi, Yamaguchi
- Agency: Nixon & Vanderhye P.C.
- Priority: JPP2008-331172 20081225
- International Application: PCT/JP2009/071256 WO 20091221
- International Announcement: WO2010/074037 WO 20100701
- Main IPC: C07F17/02
- IPC: C07F17/02 ; B01J31/00 ; C07F15/00 ; B01J31/22
Abstract:
This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.
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