Invention Grant
- Patent Title: Microwave plasma apparatus and method for materials processing
- Patent Title (中): 微波等离子体装置及材料加工方法
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Application No.: US12015842Application Date: 2008-01-17
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Publication No.: US08748785B2Publication Date: 2014-06-10
- Inventor: Eric Jordan , Baki M. Cetegen , Kamal Hadidi , Paul Woskov
- Applicant: Eric Jordan , Baki M. Cetegen , Kamal Hadidi , Paul Woskov
- Applicant Address: US CT Storrs US CT Farmington
- Assignee: Amastan LLC,University of Connecticut
- Current Assignee: Amastan LLC,University of Connecticut
- Current Assignee Address: US CT Storrs US CT Farmington
- Agency: McCormick, Paulding & Huber LLP
- Main IPC: H05B6/70
- IPC: H05B6/70 ; B23K10/00

Abstract:
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.
Public/Granted literature
- US20080173641A1 MICROWAVE PLASMA APPARATUS AND METHOD FOR MATERIALS PROCESSING Public/Granted day:2008-07-24
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