Invention Grant
- Patent Title: Electronic device with dual semiconducting layer
- Patent Title (中): 具有双重半导体层的电子器件
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Application No.: US13011130Application Date: 2011-01-21
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Publication No.: US08748873B2Publication Date: 2014-06-10
- Inventor: Yiliang Wu , Ping Liu , Nan-Xing Hu
- Applicant: Yiliang Wu , Ping Liu , Nan-Xing Hu
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01L51/10
- IPC: H01L51/10 ; H01L51/40 ; B82Y30/00 ; B82Y40/00
Abstract:
A thin film transistor has a dual semiconducting layer comprising two semiconducting sublayers. The first sublayer comprises a polythiophene and carbon nanotubes. The second sublayer comprises the polythiophene and has no carbon nanotubes. Devices comprises the dual semiconducting layer exhibit high mobility.
Public/Granted literature
- US20120187379A1 ELECTRONIC DEVICE Public/Granted day:2012-07-26
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