Invention Grant
US08748920B2 Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same 有权
具有具有渐变折射率的抗反射层的发光器件及其形成方法

  • Patent Title: Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
  • Patent Title (中): 具有具有渐变折射率的抗反射层的发光器件及其形成方法
  • Application No.: US11478873
    Application Date: 2006-06-30
  • Publication No.: US08748920B2
    Publication Date: 2014-06-10
  • Inventor: Gerald H. Negley
  • Applicant: Gerald H. Negley
  • Applicant Address: US NC Durham
  • Assignee: Cree, Inc.
  • Current Assignee: Cree, Inc.
  • Current Assignee Address: US NC Durham
  • Agency: Myers Bigel Sibley & Sajovec, PA
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
Abstract:
A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage applied thereto. An encapsulation layer is disposed on a second surface of the substrate and has a second index of refraction. An antireflective layer is disposed between a second surface of the substrate and the encapsulation layer. The antireflective layer has a graded index of refraction having values in a range between about the first index of refraction at a first surface of the antireflective layer and about the second index of refraction at a second surface of the antireflective layer. The encapsulation layer may also be omitted and the antireflective layer may separate the substrate, which has a first index of refraction, from air, which has a second index of refraction. Non “flip-chip” embodiments are also disclosed.
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