Invention Grant
US08748928B2 Continuous reflection curved mirror structure of a vertical light-emitting diode 有权
垂直发光二极管的连续反射曲面镜结构

Continuous reflection curved mirror structure of a vertical light-emitting diode
Abstract:
A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
Information query
Patent Agency Ranking
0/0