Invention Grant
- Patent Title: Continuous reflection curved mirror structure of a vertical light-emitting diode
- Patent Title (中): 垂直发光二极管的连续反射曲面镜结构
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Application No.: US13938840Application Date: 2013-07-10
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Publication No.: US08748928B2Publication Date: 2014-06-10
- Inventor: Fu-Bang Chen , Wei-Yu Yen , Li-Ping Chou , Wei-Chun Tseng , Chih-Sung Chang
- Applicant: High Power Opto. Inc.
- Applicant Address: TW Taichung
- Assignee: High Power Opto, Inc.
- Current Assignee: High Power Opto, Inc.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/20 ; H01L33/22 ; H01L33/40

Abstract:
A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
Public/Granted literature
- US20130307008A1 CONTINUOUS REFLECTION CURVED MIRROR STRUCTURE OF A VERTICAL LIGHT-EMITTING DIODE Public/Granted day:2013-11-21
Information query
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