Invention Grant
- Patent Title: Nanocrystals including III-V semiconductors
- Patent Title (中): 纳米晶体包括III-V族半导体
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Application No.: US13417894Application Date: 2012-03-12
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Publication No.: US08748933B2Publication Date: 2014-06-10
- Inventor: Moungi G. Bawendi , Sang-wook Kim , John P. Zimmer
- Applicant: Moungi G. Bawendi , Sang-wook Kim , John P. Zimmer
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.
Public/Granted literature
- US20120193606A1 Nanocrystals Including III-V Semiconductors Public/Granted day:2012-08-02
Information query
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