Invention Grant
- Patent Title: Solid-state imaging device
- Patent Title (中): 固态成像装置
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Application No.: US13769586Application Date: 2013-02-18
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Publication No.: US08748938B2Publication Date: 2014-06-10
- Inventor: Fujio Masuoka , Nozomu Harada
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Peninsula Plaza
- Assignee: Unisantis Electronics Singapore Pte. Ltd.
- Current Assignee: Unisantis Electronics Singapore Pte. Ltd.
- Current Assignee Address: SG Peninsula Plaza
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111

Abstract:
There is provided a solid-state imaging device in which a plurality of pixels is two-dimensionally arranged in a pixel region. Each of the pixels is formed in an island-shaped semiconductor. In this island-shaped semiconductor, a signal line N+ region and a P region are formed from the bottom. On an upper side surface of this P region, an N region and a P+ region are formed from an inner side of the island-shaped semiconductor. Above the P region, a P+ region is formed. By setting the P+ region and the P+ region to have a low-level voltage and setting the signal line N+ region to have a high-level voltage that is higher than the low-level voltage, signal charges accumulated in the N region are discharged to the signal line N+ region via the P region.
Public/Granted literature
- US20130214334A1 SOLID-STATE IMAGING DEVICE Public/Granted day:2013-08-22
Information query
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