Invention Grant
- Patent Title: Image sensors including a gate electrode surrounding a floating diffusion region
- Patent Title (中): 图像传感器包括围绕浮动扩散区域的栅电极
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Application No.: US13367599Application Date: 2012-02-07
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Publication No.: US08748945B2Publication Date: 2014-06-10
- Inventor: Jong-Cheol Shin
- Applicant: Jong-Cheol Shin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2011-0010725 20110207
- Main IPC: H01L29/768
- IPC: H01L29/768
Abstract:
Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
Public/Granted literature
- US20120199882A1 Image Sensors Including A Gate Electrode Surrounding A Floating Diffusion Region Public/Granted day:2012-08-09
Information query
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