Invention Grant
- Patent Title: Co-implant for backside illumination sensor
- Patent Title (中): 背面照明传感器的共植入
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Application No.: US13891993Application Date: 2013-05-10
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Publication No.: US08748952B2Publication Date: 2014-06-10
- Inventor: Cheng-Tsung Chen , Hsun-Ying Huang , Yung-Cheng Chang , Yung-Fu Yeh , Yu-Ping Chen , Chi-Yuan Liang , Shou Shu Lu , Juan-Lin Chen , Jia-Ren Chen , Horng-Daw Shen , Chi-Hsun Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
Public/Granted literature
- US20130249037A1 Co-implant for Backside Illumination Sensor Public/Granted day:2013-09-26
Information query
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