Invention Grant
US08748995B2 Nitride semiconductor device with metal layer formed on active region and coupled with electrode interconnect
有权
具有金属层的氮化物半导体器件形成在有源区上并与电极互连耦合
- Patent Title: Nitride semiconductor device with metal layer formed on active region and coupled with electrode interconnect
- Patent Title (中): 具有金属层的氮化物半导体器件形成在有源区上并与电极互连耦合
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Application No.: US13733827Application Date: 2013-01-03
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Publication No.: US08748995B2Publication Date: 2014-06-10
- Inventor: Kazuhiro Kaibara , Hidetoshi Ishida , Tetsuzo Ueda
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-157574 20100712
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A nitride semiconductor device includes a nitride semiconductor multilayer including an active region, and first and second electrodes, each having a finger-like structure and formed on the active region to be spaced from each other. A first electrode interconnect is formed on the first electrode. A second electrode interconnect is formed on the second electrode. A second insulating film is formed to cover the first and second electrode interconnects. A first metal layer is formed on the second insulating film. The first metal layer is formed above the active region with the second insulating film interposed therebetween, and is coupled to the first electrode interconnect.
Public/Granted literature
- US20130119486A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-05-16
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