An improved image sensor, e.g., CCD, CID, CMOS. The image sensor includes a substrate, e.g., silicon wafer. The sensor also includes a plurality of photo diode regions, where each of the photo diode regions is spatially disposed on the substrate. The sensor has an interlayer dielectric layer overlying the plurality of photo diode regions and a shielding layer formed overlying the interlayer dielectric layer. A silicon dioxide bearing material is overlying the shielding layer. A plurality of lens structures are formed on the silicon dioxide bearing material. The sensor also has a color filter layer overlying the lens structures and a plurality of second lens structures overlying the color filter layer according to a preferred embodiment.