Invention Grant
US08749014B2 Schottky diodes with dual guard ring regions and associated methods
有权
具有双保护环区域和相关方法的肖特基二极管
- Patent Title: Schottky diodes with dual guard ring regions and associated methods
- Patent Title (中): 具有双保护环区域和相关方法的肖特基二极管
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Application No.: US13226846Application Date: 2011-09-07
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Publication No.: US08749014B2Publication Date: 2014-06-10
- Inventor: Ji-Hyoung Yoo
- Applicant: Ji-Hyoung Yoo
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L21/329
Abstract:
The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the outer guard ring. And wherein the inner guard stripe has a shallower junction depth than the outer guard ring.
Public/Granted literature
- US20120056294A1 SCHOTTKY DIODES WITH DUAL GUARD RING REGIONS AND ASSOCIATED METHODS Public/Granted day:2012-03-08
Information query
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