When a silicon through electrode is to be formed from a back surface (the surface on which a semiconductor device is not formed) of a silicon substrate, a wide range of an interlayer insulating film made of a Low-k material absorbs moisture, and there is a problem that the electrical characteristics of wiring are degraded. The above-described problem can be solved by forming at least a single ring-shaped frame laid out to enclose the silicon through electrode by using metal wirings in plural layers and a connection via connecting the upper and lower metal wirings in a Low-k material layer penetrated by the silicon through electrode and by forming a moisture barrier film made up of at least a metal wiring and a connection via between the silicon through electrode and a circuit wiring formed in the vicinity of the silicon through electrode.