Invention Grant
- Patent Title: Semiconductor device, method for manufacturing same, and semiconductor apparatus
- Patent Title (中): 半导体装置及其制造方法以及半导体装置
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Application No.: US13051534Application Date: 2011-03-18
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Publication No.: US08749031B2Publication Date: 2014-06-10
- Inventor: Ryoji Matsushima
- Applicant: Ryoji Matsushima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-195626 20100901
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/56
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor device body and an insulating adhesive layer. The semiconductor device body is formed with a square plate shape and has an element portion provided on a first major surface. The insulating adhesive layer is provided to cover a second major surface of the semiconductor device body and one or two of four side faces of the semiconductor device body.
Public/Granted literature
- US20120049331A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR APPARATUS Public/Granted day:2012-03-01
Information query
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