Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13200944Application Date: 2011-10-05
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Publication No.: US08749033B2Publication Date: 2014-06-10
- Inventor: Takahito Watanabe , Shintaro Yamamichi , Yoshitaka Ushiyama
- Applicant: Takahito Watanabe , Shintaro Yamamichi , Yoshitaka Ushiyama
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-255088 20101115
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/02 ; H01L29/82 ; H01L31/0203
Abstract:
A semiconductor chip includes a magnetic storage device and includes an electrode pad on a first face. The semiconductor chip is coated with a magnetic shield layer in a state in which at least the electrode pad is exposed. The semiconductor chip is mounted on an interconnect substrate through a bump. At least one of the semiconductor chip and the interconnect substrate includes a convex portion, and the bump is disposed over the convex portion.
Public/Granted literature
- US20120119338A1 Semiconductor Device And Method Of Manufacturing Semiconductor Device Public/Granted day:2012-05-17
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